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FDP6644S/FDB6644S
JANUARY 2002
FDP6644S/FDB6644S
30V N-Channel PowerTrench SyncFETTM
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode.
Features
* 28 A, 30 V. RDS(ON) = 10 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V
* Includes SyncFET Schottky body diode * Low gate charge (27nC typical) * High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability *
D
D
G
G D TO-220 S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 16
(Note 1) (Note 1)
Units
V V A W W/C C C
55 150 60 0.48 -65 to +125 275
Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 C/W C/W
Package Marking and Ordering Information
Device Marking FDB6644S FDP6644S Device FDB6644S FDP6644S Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45
2002 Fairchild Semiconductor Corporation
FDP6644S/FDB6644S Rev C1(W)
FDP6644S/FDB6644S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 1mA
Min
30
Typ
Max Units
V
Off Characteristics
ID = 10mA, Referenced to 25C VDS = 24 V, VGS = 16 V, VGS = 0 V VDS = 0 V 23 500 100 -100 1 1.3 -9.5 7 8 11.5 60 89 2851 540 196 12 11 53 17 VDS = 15 V, VGS = 5 V ID = 28 A, 27 7 8 VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 28 A, diF/dt = 300 A/s 0.48 0.6 21 34 0.7 21 20 85 30 38 10 12 17 3 mV/C uA nA nA V mV/C m
VGS = -16 V VDS = 0 V VDS = VGS, ID = 1mA ID = 10mA, Referenced to 25C VGS = 10 V, ID = 28 A VGS = 4.5 V, ID = 25 A VGS=10 V, ID =28 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 28 A
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr
Notes:
A S pF pF pF ns ns ns ns nC nC nC V nS nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
(Note 1) (Note 1) (Note 2)
1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2. See "SyncFET Schottky body diode characteristics" below.
FDP6644S/FDB6644S Rev C1 (W)
FDP6644S/FDB6644S
Typical Characteristics
120 VGS = 10V 6.0V ID, DRAIN CURRENT (A) 90 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 3.0V 1.6 VGS = 3.0V 1.4 3.5V 1.2 4.5V 6.0V 1 10V
60 2.5V 30
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 30 60 ID, DRAIN CURRENT (A) 90 120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 28A VGS =10V
ID = 14A 0.02
1.4
1.2
0.015
1
TA = 125oC
0.8
0.01 TA = 25oC 0.005 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
0.6 -50 -25 0 25 50 75
o
100
125
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
90 VDS = 5V 75 ID, DRAIN CURRENT (A) 125oC 60 45 30 15 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 10 IS, REVERSE DRAIN CURRENT (A) 25oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
TA = 55oC
VGS = 0V
1
TA = 125oC
25oC 0.1 -55oC
0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6644S/FDB6644S Rev C1 (W)
FDP6644S/FDB6644S
Typical Characteristics (continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 28A 8 CAPACITANCE (pF) 20V 6 VDS = 10V 15V 3200 CISS 2400 4000 f = 1MHz VGS = 0 V
4
1600 COSS 800 CRSS
2
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 1000
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100s RDS(ON) LIMIT 10ms 100ms 1s 10s
800
SINGLE PULSE RJC = 2.1C/W TA = 25C
100
600
10
DC VGS = 10V SINGLE PULSE RJC = 2.1oC/W TA = 25oC
400
200
1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.1 1 10 t1, TIME (sec) 100 1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJC(t) = r(t) * RJC RJC = 2.1 C/W
0.1
0.1 0.05 0.02 0.01
P(pk t1 t2
SINGLE PULSE
0.01
TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6644S/FDB6644S Rev C1 (W)
FDP6644S/FDB6644S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6644S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature.
IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 100oC 0.001
Current: 0.8A/div
0.0001 TA = 25oC
Time: 12.5ns/div
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
Figure 12. FDP6644S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6644).
Current: 0.8A/div
Time: 12.5ns/div
Figure 13. Non-SyncFET (FDP6644) body diode reverse recovery characteristic.
FDP6644S/FDB6644S Rev C1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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